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Volume 21 Issue 4
Jul.  1999
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Gao Jianjun, Gao Baoxin, Liang Chunguang. EQUIVALENT CIRCUIT MODEL OF METAL-SEMICONDUCTOR-METAL PHOTODIODE[J]. Journal of Electronics & Information Technology, 1999, 21(4): 543-548.
Citation: Gao Jianjun, Gao Baoxin, Liang Chunguang. EQUIVALENT CIRCUIT MODEL OF METAL-SEMICONDUCTOR-METAL PHOTODIODE[J]. Journal of Electronics & Information Technology, 1999, 21(4): 543-548.

EQUIVALENT CIRCUIT MODEL OF METAL-SEMICONDUCTOR-METAL PHOTODIODE

  • Received Date: 1997-12-09
  • Rev Recd Date: 1998-09-24
  • Publish Date: 1999-07-19
  • An MSM photodiode equivalent circuit model based on external microwave port characters are presented in this paper, while the parameters of DC and capacitance model preserve the physical meaning. The circuit simulation results are agree with experimental results.
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  • Chou S Y, Liu M Y. Nanoscale Tera-Hert metal-semiconductor-metal photodetectors[J].IEEE J. Quantum Electron.1992, 28(10):2358-2368[2]Sano E. Adevice model for metal-semiconductor-metal photodetectors and its applications to[3]optoelectronic integrated circuit simulation. IEEE Trans. ED, 1990, ED-37(9): 1964-1968.[4]Se S M, Coleman D J, Loya A. Current transport in metal- semiconductor-metal(MSM) structure[J].Solid-State Electronics.1971, 14:1209-1218[5]Song K C, Matin M A, Robinson B,et al. High performance InP/InGaAs-based MSM photode-[6]tector operating at 1.3-1.5m[J].Solid-State Electronics.1996, 39(9):1283-1287[7]李志奇,王庆康,史常忻.GaAs MSM结构光电探测器的光电特性研究.固体电子学研究与进展,1992, 12(3): 225-229.[8]Stat H, Newman P, Smith I W, et al. GaAs device and circuit simulation in spice. IEEE Trans. ED, 1990, ED-37(9): 1964-1968.[9]Lu J, Surridge R, Pakulski G, et al. Studies of high speed metal-semiconductor-metal photodetec-[10]for with a GaAs/AlGaAs/GaAs heterostructure. IEEE Trans. ED, 1993, ED-40(6): 1087-1091.[11]Sugeta T, Urisu T, Sakata S, et al. Metal-semiconductor-metal photodetector for high speed[12]optoelectronic circuits. Japanese J. Applied Physics, 1980, 19 Supplement: (19-1): 459-464.
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