Van der Pol B. Phil.Mag., 1927, 170(3): 65-80.[2]Adler R. Proc[J].IRE.1946, 34(6):351-357[3]Chang K, Sun C. IEEE Trans. on MTT, 1983, MTT-31(2): 91-107.[4]Liu Shenggang, Xie Weikai, Liang Zbeng, Grimpe K J. Int[J].J. Electron.1988, 65(3):717-724[5]谢文楷,刘盛纲.电子科技大学学报,1989,18(5): 439-445.[6]Slater J C. Microwave Electronics. New York: Van Nostrand, 1950. Chap. 9.[7]David, Jr. E E. Crossed-field Microwave Devices, edited by Okress E. New York: Academic, 1961, Chap. 1.[8]Adler R. Proc. IEEE, 19-13, 61(10): 1380-1385.[9]Sorgent M, Scully M O, Lamb Jr. W E. Laser Physics, London: Addison-Weeley, 1974, Chap. 4.[10]Li A T, Yang A H, Chu K P. IEEE Trans. on PS, 1988, PS-16(2): 129-134.[11]Woo W, Benford J, Fittinghoff D, et al. J. Appl. Phys., 1989, 65(2): 861-866.[12]Price D, Sze H, Fittingboff D. J. Appl. Pbys., 1989, 65(12): 5185-5189.[13]Sze H, Price D, Hartencek B. J. Appl. Phys., 1990, 67(5): 2278-2282.[14]Hendricks K J, Adler R, Noggle E C. J. App. Phys., 1990, 68(2): 820-825.
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