Feng Jingxing. THE STUDY ON SILICON AND GLASS ELECTROSTATIC BONDING MECHANISM[J]. Journal of Electronics & Information Technology, 1995, 17(6): 661-664.
Citation:
Feng Jingxing. THE STUDY ON SILICON AND GLASS ELECTROSTATIC BONDING MECHANISM[J]. Journal of Electronics & Information Technology, 1995, 17(6): 661-664.
Feng Jingxing. THE STUDY ON SILICON AND GLASS ELECTROSTATIC BONDING MECHANISM[J]. Journal of Electronics & Information Technology, 1995, 17(6): 661-664.
Citation:
Feng Jingxing. THE STUDY ON SILICON AND GLASS ELECTROSTATIC BONDING MECHANISM[J]. Journal of Electronics & Information Technology, 1995, 17(6): 661-664.
The theory of plate and shell is used to analyze the problem of electrostatic bonding of glass with silicon plate. This problem is to find Out the relation between the bending stress of silicon plate and the electrostatic force of interface. The conditions of successful bonding are found. A formula among the distance d between the two surfaces and the rigidity D, the bending deflection and the voltage V is derived, and a series of experiments to verify it is performed.