A NEW METHOD FOR PATTERN MAKING BY USING ELECTRON BEAN IMAGING IN SiO2 FILM

Sun Yuping

Volume 9 Issue 5

Sep. 1987

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Article Navigation > Journal of Electronics & Information Technology > 1987 > 9(5): 477-480

Sun Yuping. A NEW METHOD FOR PATTERN MAKING BY USING ELECTRON BEAN IMAGING IN SiO2 FILM[J]. Journal of Electronics & Information Technology, 1987, 9(5): 477-480.

Citation:

Sun Yuping. A NEW METHOD FOR PATTERN MAKING BY USING ELECTRON BEAN IMAGING IN SiO2 FILM[J]. Journal of Electronics & Information Technology, 1987, 9(5): 477-480.

Sun Yuping. A NEW METHOD FOR PATTERN MAKING BY USING ELECTRON BEAN IMAGING IN SiO2 FILM[J]. Journal of Electronics & Information Technology, 1987, 9(5): 477-480.

Citation:

Sun Yuping. A NEW METHOD FOR PATTERN MAKING BY USING ELECTRON BEAN IMAGING IN SiO2 FILM[J]. Journal of Electronics & Information Technology, 1987, 9(5): 477-480.

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A NEW METHOD FOR PATTERN MAKING BY USING ELECTRON BEAN IMAGING IN SiO2 FILM

Sun Yuping

Received Date: 1986-02-14
Rev Recd Date: 1986-08-04
Publish Date: 1987-09-19

Abstract

Abstract

A new method for patterns making by using electron beam imaging in SiO2 film on silicon substrate is presented. The electron beam images in SiO2 film can form not only positive patterns but also negative patterns by using HF vapor etching and reactive media.

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