THE MATHEMATICAL MODEL OF THE DIFFERENTIAL SPV TECHNIQUE FOR MEASURING MINORITY CARRIER DIFFUSION LENGTH OF a-Si:H FILM

Zhang Zhiguo; Su Changhou

Volume 15 Issue 5

Sep. 1993

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Article Navigation > Journal of Electronics & Information Technology > 1993 > 15(5): 487-492

Zhang Zhiguo, Su Changhou. THE MATHEMATICAL MODEL OF THE DIFFERENTIAL SPV TECHNIQUE FOR MEASURING MINORITY CARRIER DIFFUSION LENGTH OF a-Si:H FILM[J]. Journal of Electronics & Information Technology, 1993, 15(5): 487-492.

Citation:

Zhang Zhiguo, Su Changhou. THE MATHEMATICAL MODEL OF THE DIFFERENTIAL SPV TECHNIQUE FOR MEASURING MINORITY CARRIER DIFFUSION LENGTH OF a-Si:H FILM[J]. Journal of Electronics & Information Technology, 1993, 15(5): 487-492.

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THE MATHEMATICAL MODEL OF THE DIFFERENTIAL SPV TECHNIQUE FOR MEASURING MINORITY CARRIER DIFFUSION LENGTH OF a-Si:H FILM

Received Date: 1992-04-13
Rev Recd Date: 1992-10-24
Publish Date: 1993-09-19

Abstract

Abstract

The differential measuring mode for minority carrier diffusion length of aSi:H film by SPV technique can eliminate the influence of back juction of the sample. This paper analyses mathematical model of such mode, deduces formula for practical use, and discusses various elements which affect the measured results.

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References(1)

References

A.R. Moore, J. Appl. Phys. 56(1984)10, 2796-2802.[2]A.R. Moore.[J].J. Appl. Phys.1983,54:1-[3]L. Sakata, J. Appl. Phys. 61 (1987)5, 1916-1927.[4]R. Sohwarz, D. Slobodin, Appl. Phys. Less., 47 (1985)7, 740-747.[5]张治国,金属-非晶硅Schottky结的形成及其用于SPV法少子扩散长度的测量暨非晶硅中电于态的研究,京北工业大学电子工程学系硕士论文,北京,1991年.

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