EXPERIMENT ANALYSIS AND MECHANISM RESEARCH ON BREAKDOWN CHARACTERISTICS OF THIN SiO2 GATE DIELECTRIC

D.J. Dumin, A nodel realiating wearout to breakdown in thin oxides, IEEE Trans. on Electron Devices, 1994, ED-41(9), 1570-1580.[2]P.P. Apte, Correlation of trap generation to charge-to-breakdown (Qbd), A lhysical-damage lnodel of dielectric breakdown, IEEE Trans. on Electron Devices, 1994, ED-41(9), 1595 1602.[3]I.C. Chen, C. Hu, Electric breakdown in thin gate and tumeling oxide, IEEE Trans. on Electron.Devices, 1985, ED-32(2), 413-422.[4]C.F. Chen, C. Y. Wu, A characterization model for constant current stressed voltage time characteristics of thin thermal oxide grown on silicon substrate, J. Appl. Phys., 1986, 60(11).3926-3944.[5]C.F. Chen, C. Y. Wu, The dielectric reliability of intrinsic thin SiO2 films thermally grown on aheavily doped Si substrate characterization and model, IEEE Trans. on Electron Devices, 1987.ED-34(7), 1540-1;51.[6]B. Ricco, Novel nechanism for tunning and breakdown of thin SiO2 filns, Phy. Rev. Lett., 1983.51(19), 1795-1798.[7]J.C. Lee, I. C. Chen, C. Hu, Model and characterization of gate oxide reliability, IEEE Trans.on Electron Devices, 1988, ED-35(12), 2268-2278.