Guo Kangjin, Hu Weiyang, Yao Wenlan, Chen Lianyong. STUDY ON Pt-GaAs SCHOTTKY BARRIER APD[J]. Journal of Electronics & Information Technology, 1992, 14(5): 517-522.
Citation:
Guo Kangjin, Hu Weiyang, Yao Wenlan, Chen Lianyong. STUDY ON Pt-GaAs SCHOTTKY BARRIER APD[J]. Journal of Electronics & Information Technology, 1992, 14(5): 517-522.
Guo Kangjin, Hu Weiyang, Yao Wenlan, Chen Lianyong. STUDY ON Pt-GaAs SCHOTTKY BARRIER APD[J]. Journal of Electronics & Information Technology, 1992, 14(5): 517-522.
Citation:
Guo Kangjin, Hu Weiyang, Yao Wenlan, Chen Lianyong. STUDY ON Pt-GaAs SCHOTTKY BARRIER APD[J]. Journal of Electronics & Information Technology, 1992, 14(5): 517-522.
Pt-GaAs Schottky barrier APDs have been investigated. The devices were fabricated on GaAs epitaxial layer with carrier concentration of 0.5-31015cm-3 and thickness of about 20 m. Guard ring along with sensitive area was formed by H+ bombardment with energy of 500 keV and dosage of 11015cm-2 to prevent edge breakdown. Semi-transparem Pt film was evaporated using a special evaporation source. The peak response wavelength of the device is 8600 -8835 at different bias voltages. Optical absopdon edge could extended to 9700 . Franz-Keldysh effect has been observed. The multiplication of above 100 could reach. Dark current is about several nA. Excess noise coefficient is 7 and both rise and fall time were less than 1 ns. The device could be integrated monolithically and planarly with GaAs FET.
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