The results of a study in the diffusion length of holes in a-Si:H by measuring the sur-face photovoltage of the metal (Ni) Schottky barrier is reported. The change of field-assis-ted hole transport with bias light was observed. It is believed that measurement of diffusion length by this method may become a useful way of detecting and improving the quality of a-Si:H.
J. Dresner, D. J. Szostak and B. Goldstein, Appl. Phys. Lett., 38(1981), 998.[3]A. R. Moore, Appl. Phys. Lett., 40(1982), 403.[7]R. O. Bell, Appl. Phys. Lett., 36(1980), 936.
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