A STUDY OF SIMULTANEOUS FORMATION OF AR AND BST FOR HIGH EFFICIENCY SILICON SOLAR CELLS

Liu Enke; Jia Quanxi

Volume 10 Issue 3

May 1988

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Article Navigation > Journal of Electronics & Information Technology > 1988 > 10(3): 285-288

Liu Enke, Jia Quanxi. A STUDY OF SIMULTANEOUS FORMATION OF AR AND BST FOR HIGH EFFICIENCY SILICON SOLAR CELLS[J]. Journal of Electronics & Information Technology, 1988, 10(3): 285-288.

Citation:

Liu Enke, Jia Quanxi. A STUDY OF SIMULTANEOUS FORMATION OF AR AND BST FOR HIGH EFFICIENCY SILICON SOLAR CELLS[J]. Journal of Electronics & Information Technology, 1988, 10(3): 285-288.

Liu Enke, Jia Quanxi. A STUDY OF SIMULTANEOUS FORMATION OF AR AND BST FOR HIGH EFFICIENCY SILICON SOLAR CELLS[J]. Journal of Electronics & Information Technology, 1988, 10(3): 285-288.

Citation:

Liu Enke, Jia Quanxi. A STUDY OF SIMULTANEOUS FORMATION OF AR AND BST FOR HIGH EFFICIENCY SILICON SOLAR CELLS[J]. Journal of Electronics & Information Technology, 1988, 10(3): 285-288.

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A STUDY OF SIMULTANEOUS FORMATION OF AR AND BST FOR HIGH EFFICIENCY SILICON SOLAR CELLS

Received Date: 1986-07-21
Rev Recd Date: 1988-01-09
Publish Date: 1988-05-19

Abstract

Abstract

A new processing method in which the antireflective coating (AR) Si3N4 is deposite by LPCVD, at the same time, the Al-alloyed high low junction BSF is formed, is described. In the method, the procedure is simplified for fabricating high efficiency silicon solar cells, that is the AR-BSF to be formed in one step, and because the system is in high vacuum and the cells are in the ambinet of N2 as well as H2, so that the surface characteristics of emitters in the cells is improved.

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References(1)

References

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