THE FIELD ENHANCED CARRIER GENERATION EFFECT OF DEEP LEVEL CENTERS

Ding Koubao; Zhang Xiumiao

Volume 16 Issue 1

Jan. 1994

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Ding Koubao, Zhang Xiumiao. THE FIELD ENHANCED CARRIER GENERATION EFFECT OF DEEP LEVEL CENTERS[J]. Journal of Electronics & Information Technology, 1994, 16(1): 61-66.

Citation:

Ding Koubao, Zhang Xiumiao. THE FIELD ENHANCED CARRIER GENERATION EFFECT OF DEEP LEVEL CENTERS[J]. Journal of Electronics & Information Technology, 1994, 16(1): 61-66.

Ding Koubao, Zhang Xiumiao. THE FIELD ENHANCED CARRIER GENERATION EFFECT OF DEEP LEVEL CENTERS[J]. Journal of Electronics & Information Technology, 1994, 16(1): 61-66.

Citation:

Ding Koubao, Zhang Xiumiao. THE FIELD ENHANCED CARRIER GENERATION EFFECT OF DEEP LEVEL CENTERS[J]. Journal of Electronics & Information Technology, 1994, 16(1): 61-66.

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THE FIELD ENHANCED CARRIER GENERATION EFFECT OF DEEP LEVEL CENTERS

Received Date: 1992-06-30
Rev Recd Date: 1993-01-07
Publish Date: 1994-01-19

Abstract

Abstract

The field-enhanced carrier generation of deep level centers in semiconductor space charge region has been studied. This paper points out that both Cou-lombic emission and non-Coulombic emission must be considered into the carrier generation rates of deep level centers. On this basis, a formula of generation rate has been given. The analysis of the computing results shows tkat previous model, in which only Coulombic emission was considered, is rather simple, and tke tkeory proposed in this paper can more satisfactorilyt explain the experimental results.

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References(1)

References

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