CONTROL AND UTILIZATION OF DEFECTS IN SILICON SUBSTRATES

Shi Zunlan Luo Guichang; He Dezhan; Shao Haiwen

Volume 10 Issue 3

May 1988

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Shi Zunlan Luo Guichang, He Dezhan, Shao Haiwen. CONTROL AND UTILIZATION OF DEFECTS IN SILICON SUBSTRATES[J]. Journal of Electronics & Information Technology, 1988, 10(3): 279-284.

Citation:

Shi Zunlan Luo Guichang, He Dezhan, Shao Haiwen. CONTROL AND UTILIZATION OF DEFECTS IN SILICON SUBSTRATES[J]. Journal of Electronics & Information Technology, 1988, 10(3): 279-284.

Shi Zunlan Luo Guichang, He Dezhan, Shao Haiwen. CONTROL AND UTILIZATION OF DEFECTS IN SILICON SUBSTRATES[J]. Journal of Electronics & Information Technology, 1988, 10(3): 279-284.

Citation:

Shi Zunlan Luo Guichang, He Dezhan, Shao Haiwen. CONTROL AND UTILIZATION OF DEFECTS IN SILICON SUBSTRATES[J]. Journal of Electronics & Information Technology, 1988, 10(3): 279-284.

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CONTROL AND UTILIZATION OF DEFECTS IN SILICON SUBSTRATES

Received Date: 1986-04-14
Rev Recd Date: 1987-04-13
Publish Date: 1988-05-19

Abstract

Abstract

Some experimental results are reported and discussed. The n+p junction leakage currents and the MOS generation lifetimes of wafers pretreated by the 1G method can be improved by 1-3 and 1-2 orders of magnetitute respectively, while the yields of diodes mode from silicon wafers pretreated by the chlorine oxidation gettring are approximately 3 times of those untreated. It is suggested that a combination of 2 or more defect control methods are necessary to meet the increasingly stringent demands of silicon substrates quality required for LSI, VLSI circuits.

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References(1)

References

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