Pan Hui-Zhen, Zhang Gui-Cheng, Xu Shao-Hua, Pang Yong-Xiu, Cheng Zong-Quan, Fu Xiao-Mei, Zhu Li-Ming, Hu Dao-Shan. THE STUDY OF GaAs DOUBLE HETEROJUNCTION HIGH-RADIANCE LIGHT-EMITTING DIODES[J]. Journal of Electronics & Information Technology, 1981, 3(1): 22-28.
Citation:
Pan Hui-Zhen, Zhang Gui-Cheng, Xu Shao-Hua, Pang Yong-Xiu, Cheng Zong-Quan, Fu Xiao-Mei, Zhu Li-Ming, Hu Dao-Shan. THE STUDY OF GaAs DOUBLE HETEROJUNCTION HIGH-RADIANCE LIGHT-EMITTING DIODES[J]. Journal of Electronics & Information Technology, 1981, 3(1): 22-28.
Pan Hui-Zhen, Zhang Gui-Cheng, Xu Shao-Hua, Pang Yong-Xiu, Cheng Zong-Quan, Fu Xiao-Mei, Zhu Li-Ming, Hu Dao-Shan. THE STUDY OF GaAs DOUBLE HETEROJUNCTION HIGH-RADIANCE LIGHT-EMITTING DIODES[J]. Journal of Electronics & Information Technology, 1981, 3(1): 22-28.
Citation:
Pan Hui-Zhen, Zhang Gui-Cheng, Xu Shao-Hua, Pang Yong-Xiu, Cheng Zong-Quan, Fu Xiao-Mei, Zhu Li-Ming, Hu Dao-Shan. THE STUDY OF GaAs DOUBLE HETEROJUNCTION HIGH-RADIANCE LIGHT-EMITTING DIODES[J]. Journal of Electronics & Information Technology, 1981, 3(1): 22-28.
GaAs-Ga1-x Alx As double heterojunction material was grown by liquid phase epitaxial technique, and small area high radiance light emitting diodes are made. The radiation power is above 100W/sr.cm2, output power of the tail fibre (inner diameter 60m N.A.=0.17) is 200W, and extrapolated life reaches 105 hours. It is already being used in the 1.8km 8.448 Mb/s PCM-120 route optic fibre telephone communication system. Analysis is made on the operational characteristics of the diodes. Factors affecting its proper use and approaches for improvement are discussed.
C. A. Burrus, Optic. Comm.,4(1971), 307.[2]泮慧珍、邬祥生,黄磊,科技通讯,1978,第3期,第7页.[4]H. F. Lockwood and M. Ettenberg, J. Crystal growth, 15(1972),81.[5]]张桂成等,科技通讯,1978,第3期,第51页.[6]Shigonebu Yamakoshi, et al., Appl. Phys. Lett., 31(1977), 627.[7]J. I. Pankove, IEEE J. Quantum Electron QE-4(1968), 119.
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