Chen Dong-po, He Le-nian, Yan Xiao-lang. A Low-dropout Regulator with Low Quiescent Current and High Stability[J]. Journal of Electronics & Information Technology, 2006, 28(8): 1526-1529.
Citation:
Chen Dong-po, He Le-nian, Yan Xiao-lang. A Low-dropout Regulator with Low Quiescent Current and High Stability[J]. Journal of Electronics & Information Technology, 2006, 28(8): 1526-1529.
Chen Dong-po, He Le-nian, Yan Xiao-lang. A Low-dropout Regulator with Low Quiescent Current and High Stability[J]. Journal of Electronics & Information Technology, 2006, 28(8): 1526-1529.
Citation:
Chen Dong-po, He Le-nian, Yan Xiao-lang. A Low-dropout Regulator with Low Quiescent Current and High Stability[J]. Journal of Electronics & Information Technology, 2006, 28(8): 1526-1529.
An unconditionally stable low-dropout regulator and low quiescent current is presented. The Low DropOut ( LDO) based on a high precision CMOS current reference, which is comprised of subthreshold transistors and has small temperature coefficient, provides a low quiescent current of approximately 4A. Furthermore, by utilizing the design method of active Miller frequency compensation, the proposed LDOs stability is independent of the load or the Equivalent Series Resistance (ESR) of the off-chip capacitor. The chip design is based on 0.5#61549;m CMOS mixed-signal process of CSMC. The simulation and experimental results show that the line and load regulations are only 2mV and 14mV, respectively. The dropout voltage is only 170mV at 150mA output current when output voltage is 3.3V. The output noise is 150VRMS when frequency range is from 22Hz to 80 kHz.
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