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Volume 7 Issue 5
Sep.  1985
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Yang Yi, Wu Xiangsheng, Li Runshen, Tan Ruhuan, Li Yunping, Shui Hailong . THE STUDY OF LATTICE MATCH IN GaInAsP/InP HETEROJUNCTION LPE LAYERS[J]. Journal of Electronics & Information Technology, 1985, 7(5): 395-400.
Citation: Yang Yi, Wu Xiangsheng, Li Runshen, Tan Ruhuan, Li Yunping, Shui Hailong . THE STUDY OF LATTICE MATCH IN GaInAsP/InP HETEROJUNCTION LPE LAYERS[J]. Journal of Electronics & Information Technology, 1985, 7(5): 395-400.

THE STUDY OF LATTICE MATCH IN GaInAsP/InP HETEROJUNCTION LPE LAYERS

  • Received Date: 1983-07-25
  • Rev Recd Date: 1984-08-20
  • Publish Date: 1985-09-19
  • The effects of the growth conditions of two-phase solution liquid phase epitaxy (LPE) (i.e. growth temperature, cooling rates and solution oomposition) on lattiee mismatch and bandgap wavelength in GaInAs/InP heterojunction LPE layers have been investigated by X-ray double-erystal diffractometry and double-beam spectrophotometer. The interface stress in the grown interface free of misfit dislocations and the lattiee mismatch at growth temperature have been calculated.
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