CALCULATION OF THE INTRINSIC CARRIER CONCENTRA TION IN SILICON AT LOW TEMPERATURE

Zheng Jiang; Wei Tongli; Wang Shu; Huang Qin

Volume 14 Issue 3

May 1992

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Article Navigation > Journal of Electronics & Information Technology > 1992 > 14(3): 323-328

Zheng Jiang, Wei Tongli, Wang Shu, Huang Qin. CALCULATION OF THE INTRINSIC CARRIER CONCENTRA TION IN SILICON AT LOW TEMPERATURE[J]. Journal of Electronics & Information Technology, 1992, 14(3): 323-328.

Citation:

Zheng Jiang, Wei Tongli, Wang Shu, Huang Qin. CALCULATION OF THE INTRINSIC CARRIER CONCENTRA TION IN SILICON AT LOW TEMPERATURE[J]. Journal of Electronics & Information Technology, 1992, 14(3): 323-328.

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CALCULATION OF THE INTRINSIC CARRIER CONCENTRA TION IN SILICON AT LOW TEMPERATURE

Received Date: 1990-05-22
Rev Recd Date: 1991-09-18
Publish Date: 1992-05-19

Abstract

Abstract

A accurate expression for the bandgap and a simple formula for the intrinsic carrier concentration at low temperature are presented. The relation between the intrinsic carrier concentration and the temperature and doping concentration in the heavily doped silicon is obtained, under the consideration of the narrowing effect of the bandgap at the heavy doping level. It is indicated that the intrinsic carrier concentration increases more rapidly with increasing the doping concentration at low temperature than at room temperature.

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References

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