THE DYNAMICS IN PHOTOCONDUCTION RESPONSE OF AMORPHOUS SILICON (Ⅰ) The Photoconduction Response under Strong Electric Field

Hai Yu-Han; Zhou  Zhong-Yi

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Article Navigation > Journal of Electronics & Information Technology > 1982 > 4(4): 248-257

Hai Yu-Han, Zhou Zhong-Yi. THE DYNAMICS IN PHOTOCONDUCTION RESPONSE OF AMORPHOUS SILICON (Ⅰ) The Photoconduction Response under Strong Electric Field[J]. Journal of Electronics & Information Technology, 1982, 4(4): 248-257.

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Hai Yu-Han, Zhou Zhong-Yi. THE DYNAMICS IN PHOTOCONDUCTION RESPONSE OF AMORPHOUS SILICON (Ⅰ) The Photoconduction Response under Strong Electric Field[J]. Journal of Electronics & Information Technology, 1982, 4(4): 248-257.

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THE DYNAMICS IN PHOTOCONDUCTION RESPONSE OF AMORPHOUS SILICON (Ⅰ) The Photoconduction Response under Strong Electric Field

Received Date: 1980-09-18
Rev Recd Date: 1982-03-02
Publish Date: 1982-07-19

Abstract

Abstract

In this paper, the photoconduction response and related effects under different conditions are investigated from the view point of dynamics. The photoconduction response under strong electric field is discussed.The photoconduction response under different illumination and different field intensity have been measured. In strong light region with certain strong field, the time constant 0 versus illumination F is given by the relation 0=aF-0.5; however, 0 is a constant in weak light region. The rise time varies exponentially with the field intensity, but the decay time is a constant. Because normal ideas about crystals could not fir the condition of a-Si, we derived an equation of photoconduction response with illumination in both weak and strong light regions, according to the Mott-CFO model and by the rate equations. It can explain the expermental results well.

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References(1)

References

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