STUDY OF THERMALLY EXCITED SILICON BEAM RESONATOR

Chen Deyong; Cui Dafu; Wang Li; Han Jinghong

Volume 23 Issue 8

Aug. 2001

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Article Navigation > Journal of Electronics & Information Technology > 2001 > 23(8): 785-792

Chen Deyong, Cui Dafu, Wang Li, Han Jinghong. STUDY OF THERMALLY EXCITED SILICON BEAM RESONATOR[J]. Journal of Electronics & Information Technology, 2001, 23(8): 785-792.

Citation:

Chen Deyong, Cui Dafu, Wang Li, Han Jinghong. STUDY OF THERMALLY EXCITED SILICON BEAM RESONATOR[J]. Journal of Electronics & Information Technology, 2001, 23(8): 785-792.

Chen Deyong, Cui Dafu, Wang Li, Han Jinghong. STUDY OF THERMALLY EXCITED SILICON BEAM RESONATOR[J]. Journal of Electronics & Information Technology, 2001, 23(8): 785-792.

Citation:

Chen Deyong, Cui Dafu, Wang Li, Han Jinghong. STUDY OF THERMALLY EXCITED SILICON BEAM RESONATOR[J]. Journal of Electronics & Information Technology, 2001, 23(8): 785-792.

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STUDY OF THERMALLY EXCITED SILICON BEAM RESONATOR

Received Date: 1999-09-13
Rev Recd Date: 2000-05-04
Publish Date: 2001-08-19

Abstract

Abstract

A micro-machined single crystal beam resonator for high accuracy pressure sensors by utilizing Micro-ElectroMechanical System (MEMS) technology has been successfully fabricated. By means of thermal excitation, the frequency response (including amplitude and phase) of the resonator has been characterized with an open-loop frequency sweeping method. The -3dB width of resonant peak (less than 1.2Hz) corresponds a very high quality factor Q value greater than 33000 in vacuum at room-temperature. The frequency response of the resonator at different levels of excitation has been discussed theoretically and experitrientally The result shows a good linearity of frequency versus excitation power at lower excitation power, and is coincident with the theory.

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References(1)

References

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