OPTICAL EFFECTS AND MICROSTRUCTURE OF BURIED INSULATION LAYER FORMED BY O~+ AND N~+ CO-IMPLANTATION

Yu Yuehui; Lin Chenglu; Zhu Wenhua; Zou Shichang; Lu Jiang

Volume 13 Issue 5

Sep. 1991

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Article Navigation > Journal of Electronics & Information Technology > 1991 > 13(5): 489-495

Yu Yuehui, Lin Chenglu, Zhu Wenhua, Zou Shichang, Lu Jiang. OPTICAL EFFECTS AND MICROSTRUCTURE OF BURIED INSULATION LAYER FORMED BY O~+ AND N~+ CO-IMPLANTATION[J]. Journal of Electronics & Information Technology, 1991, 13(5): 489-495.

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Yu Yuehui, Lin Chenglu, Zhu Wenhua, Zou Shichang, Lu Jiang. OPTICAL EFFECTS AND MICROSTRUCTURE OF BURIED INSULATION LAYER FORMED BY O~+ AND N~+ CO-IMPLANTATION[J]. Journal of Electronics & Information Technology, 1991, 13(5): 489-495.

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OPTICAL EFFECTS AND MICROSTRUCTURE OF BURIED INSULATION LAYER FORMED BY O~+ AND N~+ CO-IMPLANTATION

Received Date: 1990-06-04
Rev Recd Date: 1990-09-19
Publish Date: 1991-09-19

Abstract

Abstract

The microstructure and optical properties of a buried layer formed by O+ (200keV, 1.81018/cm2) and N+ (180keV, 41017/cm2) co-implantation and annealed at 1200 ℃ for 2h have been investigated by Auger electron, IR absorption and reflection spectroscopic measurements. The results show that the buried layer consists of silicon dioxide and SiO2 (x2) and the nitrogen segregates to the wings of the buried layer where it forms an oxyni-tride. By detail theoretical analysis and computer simulation of the IR reflection interference spectrum, refractive index profiles of the buried layer woere obtained.

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References(1)

References

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