Wang Wenqi, Yang Xinmin, Lu Zhuping, Zhu Wenyn. DESIGN AND PERFORMANCE OF COMPACT LOW NOICE GaAs MESFET AMPLIFIERS FOR UHF OPERATION[J]. Journal of Electronics & Information Technology, 1985, 7(5): 374-380.
Citation:
Wang Wenqi, Yang Xinmin, Lu Zhuping, Zhu Wenyn. DESIGN AND PERFORMANCE OF COMPACT LOW NOICE GaAs MESFET AMPLIFIERS FOR UHF OPERATION[J]. Journal of Electronics & Information Technology, 1985, 7(5): 374-380.
Wang Wenqi, Yang Xinmin, Lu Zhuping, Zhu Wenyn. DESIGN AND PERFORMANCE OF COMPACT LOW NOICE GaAs MESFET AMPLIFIERS FOR UHF OPERATION[J]. Journal of Electronics & Information Technology, 1985, 7(5): 374-380.
Citation:
Wang Wenqi, Yang Xinmin, Lu Zhuping, Zhu Wenyn. DESIGN AND PERFORMANCE OF COMPACT LOW NOICE GaAs MESFET AMPLIFIERS FOR UHF OPERATION[J]. Journal of Electronics & Information Technology, 1985, 7(5): 374-380.
The design considerations and experimental results of compact low noice GaAs MESFET amplifiers for UHF operation were described in this paper. The miniaturized and optimized circuits were obtained by means of special matching network and CAD technique. Both two-stage unit at 700 MHz and three-stage unit at 1000 MHz were fabricated on 5060 mm2 alumina substrate, and the power gain of 29 and 30 dB, noice figure of 0.8 and 1.2 dB and bandwidth of 40(3 dB) and 100 MHz (1 dB) were obtained, respectively, The satellite direct broadcasting receiver constructed with the 700 MHz GaAs MESFET amplifier has clear pictures and good sound.
M. Miama and H. Katoh, Electron. Lett., 14(1978), 319.[2]Takeshi Sato, et al., National Tech. Report, 26(1980), 334.[3]王渭源等,半导体学报,3(1982), 493.[4]Shotaro Nambu, et al., IEEE J. of SC, SC-17(1982), 648.[5]杨新民,王渭源,王文骐,应用科学学报,3(1985), 46.[6]James Fawcette, Microwave Systems News, 10(1980)2, 42.[7]G. Barbari, Microwaves and RF, 23(1984) 2, 141.
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