ANALYSIS OF THE SURFACE PHOTO-VOLTAGE METHOD MEASUREMENTS

Zhang Xiumiao; He Guogen; Song Jiatao

Volume 15 Issue 1

Jan. 1993

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Zhang Xiumiao, He Guogen, Song Jiatao. ANALYSIS OF THE SURFACE PHOTO-VOLTAGE METHOD MEASUREMENTS[J]. Journal of Electronics & Information Technology, 1993, 15(1): 103-107.

Citation:

Zhang Xiumiao, He Guogen, Song Jiatao. ANALYSIS OF THE SURFACE PHOTO-VOLTAGE METHOD MEASUREMENTS[J]. Journal of Electronics & Information Technology, 1993, 15(1): 103-107.

Zhang Xiumiao, He Guogen, Song Jiatao. ANALYSIS OF THE SURFACE PHOTO-VOLTAGE METHOD MEASUREMENTS[J]. Journal of Electronics & Information Technology, 1993, 15(1): 103-107.

Citation:

Zhang Xiumiao, He Guogen, Song Jiatao. ANALYSIS OF THE SURFACE PHOTO-VOLTAGE METHOD MEASUREMENTS[J]. Journal of Electronics & Information Technology, 1993, 15(1): 103-107.

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ANALYSIS OF THE SURFACE PHOTO-VOLTAGE METHOD MEASUREMENTS

Zhang Xiumiao^{①;贺国根},
He Guogen,
Song Jiatao

Received Date: 1991-07-23
Rev Recd Date: 1992-03-30
Publish Date: 1993-01-19

Abstract

Abstract

The applicability of the assumption, the surface photo-voltage is a monotonic function of the surface excess minority carrier density, to epitaxial material is studied by numerical analysis method. It is found that this assumption is unreasonable for epitaxial material in general. Therefore when the minority carrier diffusion length in epitaxial material is measured by the equal-surface-photo-voltage method, the surface excess minority carrier density should not be considered as a constant. In this paper,the condition under which the surface excess minority carrier density may be treated as a constant is also analysed.

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References

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