3-D EDGE-ELEMENT ANALYSIS FOR THE CHARACTERISTIC PARAMETERS OF II-VI SEMICONDUCTOR MATERIALS

Xu Shanjia; Sheng Xinqing; Jia Dongyan

Volume 21 Issue 1

Jan. 1999

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Article Navigation > Journal of Electronics & Information Technology > 1999 > 21(1): 110-114

Xu Shanjia, Sheng Xinqing, Jia Dongyan. 3-D EDGE-ELEMENT ANALYSIS FOR THE CHARACTERISTIC PARAMETERS OF II-VI SEMICONDUCTOR MATERIALS[J]. Journal of Electronics & Information Technology, 1999, 21(1): 110-114.

Citation:

Xu Shanjia, Sheng Xinqing, Jia Dongyan. 3-D EDGE-ELEMENT ANALYSIS FOR THE CHARACTERISTIC PARAMETERS OF II-VI SEMICONDUCTOR MATERIALS[J]. Journal of Electronics & Information Technology, 1999, 21(1): 110-114.

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3-D EDGE-ELEMENT ANALYSIS FOR THE CHARACTERISTIC PARAMETERS OF II-VI SEMICONDUCTOR MATERIALS

Received Date: 1997-07-11
Rev Recd Date: 1998-02-12
Publish Date: 1999-01-19

Abstract

Abstract

The scattering characteristics of Ⅱ- Ⅵ semiconductor materials with tensor conductivity resulting of the Hall-effect,filled in waveguide with gaps are analyzed with 3-D edge-element.Some useful curves are given and the procedure of determining mobility and carrier concentration of Ⅱ-Ⅵ semiconductor materials with these curves is described.Since this method starts from the functional variation directly,it avoids the difficulty,met in the other methods,of solving the eigenvalue problem for very thin lossy isotropic dielectric loaded waveguide.The experimental results confirm the effectiveness,reliability and accuracy of the approach.

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References(1)

References

Greiner P, Poligone L, Becker C R, Geick R. Contactless measurement of the conductivity of II-VI epitaxial layers by means of the partially filled waveguide method, Appl. Phys., 1992, A55: 279-288.[2]Shanjia Xu, Xinzhang Wu, Greiner P, Becker C R, Geick R, Microwave transmission and reflection of stratified lossy dielectric segment partial filled waveguide, International Journal of Infrared and[3]Millimeter Waves, 1992, 13(4): 569-587.[3] Shanjia Xu, Xingqing Sheng, Greiner P, Becker C R, Geick R, High-order finite-element analysis for scattering charcateristics of II-VI semiconductor materials, Chinese Journal of Infrared and Millimeter Waves, 1992, 12(6): 177-184.[4]Shanjia Xu, Xingzhang Wu, Boege P, Schafer H, Becker C R, Geick R, Scattering characteristics of 3-D discontinuity consisting of semi-conductor sample filled in waveguide, International Journal of Infrared and Millimeter Waves, 1993, 14(10): 2155-2190.[5]Chen C H, Lien C D. The variational principle for non-self-adjoint electromagnetic problems, IEEE Trans. on Microwave Theory and Tech., 1993, MTT-28(8): 878-886.

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