THE SPIN POLARIZED EFFECT OF PHOTOELECTRONS EMITTED FROM GaAs SURFACE

Zhou Qing; Zhao Shouzhen; Li Yuming; Fang Lan; Zhang Liming

Volume 12 Issue 2

Mar. 1990

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Article Navigation > Journal of Electronics & Information Technology > 1990 > 12(2): 219-224

Zhou Qing, Zhao Shouzhen, Li Yuming, Fang Lan, Zhang Liming. THE SPIN POLARIZED EFFECT OF PHOTOELECTRONS EMITTED FROM GaAs SURFACE[J]. Journal of Electronics & Information Technology, 1990, 12(2): 219-224.

Citation:

Zhou Qing, Zhao Shouzhen, Li Yuming, Fang Lan, Zhang Liming. THE SPIN POLARIZED EFFECT OF PHOTOELECTRONS EMITTED FROM GaAs SURFACE[J]. Journal of Electronics & Information Technology, 1990, 12(2): 219-224.

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THE SPIN POLARIZED EFFECT OF PHOTOELECTRONS EMITTED FROM GaAs SURFACE

Received Date: 1987-09-29
Rev Recd Date: 1989-07-18
Publish Date: 1990-03-19

Abstract

Abstract

The principle of the spin polarized effect of photoelectrons emitted from NEA GaAs surface which is irradiated by circularly polarized light is described in detail. The preparation of NEA GaAs surface and apparatus used also are mentioned. A photoelectron beam with sensitivity of 8 A/mW and polarization of above 35% is obtained on the NEA GaAs (100) surface in the activation with caesium and oxygen. It is found that the first maximum emission occurs as the GaAs surface is caesiated in a monolayer of 50% to 60% and unstable emission is caused by desorption of caesium.

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References(1)

References

E. Garwin, D. T. Pierce et al., Phys. Acta, 47(1974), 343.[2]D. T. Pierce,Felix Meier, Phys. Rev., B13(1976) 12, 5484-5500.[3]D. T. Pierce et al., Rev. Sct. Instrum., 51(1980) 4, 478-499.[4]J. Kessier, Polarized Electrons, Berlin, springer,1976.[5]周清等,真空科学与技术,7(1987),404-406.[6]周清等,真空科学与技术,8(1988),59-62.[7]B. Reihl et al., Phys. Rev., B19(1979), 6358-6366.

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