LOW TEMPERATURE OPEN TUBE Zn DIFFUSION IN InP/lnGaAs(P)

Li Weidan; Pan Huizhen

Volume 9 Issue 6

Nov. 1987

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Li Weidan, Pan Huizhen. LOW TEMPERATURE OPEN TUBE Zn DIFFUSION IN InP/lnGaAs(P)[J]. Journal of Electronics & Information Technology, 1987, 9(6): 571-576.

Citation:

Li Weidan, Pan Huizhen. LOW TEMPERATURE OPEN TUBE Zn DIFFUSION IN InP/lnGaAs(P)[J]. Journal of Electronics & Information Technology, 1987, 9(6): 571-576.

Li Weidan, Pan Huizhen. LOW TEMPERATURE OPEN TUBE Zn DIFFUSION IN InP/lnGaAs(P)[J]. Journal of Electronics & Information Technology, 1987, 9(6): 571-576.

Citation:

Li Weidan, Pan Huizhen. LOW TEMPERATURE OPEN TUBE Zn DIFFUSION IN InP/lnGaAs(P)[J]. Journal of Electronics & Information Technology, 1987, 9(6): 571-576.

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LOW TEMPERATURE OPEN TUBE Zn DIFFUSION IN InP/lnGaAs(P)

Received Date: 1986-05-22
Rev Recd Date: 1986-12-29
Publish Date: 1987-11-19

Abstract

Abstract

A new method for accurate Zn diffusion in InP/InGaAs(P) at low temperature is put forward in order to keep the carrier profile in multilayers from redistribution. Several kinds of diffusion sources with different Zn contents are used in the experiment that shows good reprodu-cibility of the method. Using this method, the characteristics of low temperature Zn diffusion in InP, InGaAs and InGaAsP are studied, and it is found for the first time that the Zn diffusion, rate is proportional to the square of the phosphorus content in the materials.

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References(1)

References

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