CONTACT CHARACTERISTICS OF THE p-InP/Ag-Zn/Mn SYSTEM AND APPLICATION

Zhang Guicheng; Chen Zongquan; Jiang Huiying; Yu Zhizhong

Volume 12 Issue 2

Mar. 1990

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Article Navigation > Journal of Electronics & Information Technology > 1990 > 12(2): 214-218

Zhang Guicheng, Chen Zongquan, Jiang Huiying, Yu Zhizhong. CONTACT CHARACTERISTICS OF THE p-InP/Ag-Zn/Mn SYSTEM AND APPLICATION[J]. Journal of Electronics & Information Technology, 1990, 12(2): 214-218.

Citation:

Zhang Guicheng, Chen Zongquan, Jiang Huiying, Yu Zhizhong. CONTACT CHARACTERISTICS OF THE p-InP/Ag-Zn/Mn SYSTEM AND APPLICATION[J]. Journal of Electronics & Information Technology, 1990, 12(2): 214-218.

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CONTACT CHARACTERISTICS OF THE p-InP/Ag-Zn/Mn SYSTEM AND APPLICATION

Received Date: 1988-01-09
Rev Recd Date: 1988-05-01
Publish Date: 1990-03-19

Abstract

Abstract

The contact characteristics and the interdiffusion of p-InP/Ag-Zn/Mn system are investigated by four-probe method and Auger electroscopy. The surface morphology of the heat treatment sample is observed by SEM. The specific contact resistance (ec) which is function of the alloy temperature and time is also given. The (ec(2-4)10-4cm at 400. The Ag-Zn/Mn system already is used in the InGaAsP/InP Edgeemitting LEDS, Rs4-6. The results shown that the Ag-Mn material is stable and reproducible.

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References(1)

References

E. Kuphal, Solid-state Electronics, 24(1981), 69.[2]A. K. Chin, et al., Jpn. J. Appl. Phys., 8(1981), 1487.[3]张桂成等,电子科学学刊,2(1984),174.[4]H. Temkin, et al., Appl. Phys. Lett., 36 (1980), 444.[5]A. K. Chin, et al., Appl. Phys. Lett., 41 (1982), 555.[6]张桂成等,发光与显示,1(1985), 5.[7]W. Tseng, et al., J. Vac. Sci. Technol., 19 (1981), 623.[8]A. J. Volois, et al., Solid-state Electronics, 25(1982), 973.

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