Ji Zhijiang, Zhang Weilian, Wang Zhijun. THE STUDY OF THE FORMATION OF DENUDED ZONE IN CZSi BY INTERNAL GETTERING THREE-STEP ANNEALING[J]. Journal of Electronics & Information Technology, 1996, 18(2): 217-220.
Citation:
Ji Zhijiang, Zhang Weilian, Wang Zhijun. THE STUDY OF THE FORMATION OF DENUDED ZONE IN CZSi BY INTERNAL GETTERING THREE-STEP ANNEALING[J]. Journal of Electronics & Information Technology, 1996, 18(2): 217-220.
Ji Zhijiang, Zhang Weilian, Wang Zhijun. THE STUDY OF THE FORMATION OF DENUDED ZONE IN CZSi BY INTERNAL GETTERING THREE-STEP ANNEALING[J]. Journal of Electronics & Information Technology, 1996, 18(2): 217-220.
Citation:
Ji Zhijiang, Zhang Weilian, Wang Zhijun. THE STUDY OF THE FORMATION OF DENUDED ZONE IN CZSi BY INTERNAL GETTERING THREE-STEP ANNEALING[J]. Journal of Electronics & Information Technology, 1996, 18(2): 217-220.
The effect of Ge doped in CZSi on the precipitation and the defect-free zone (DFZ) formation in Ge-doped CZSi wafers after a three step gettering annealing was studied. It is found that Ge not only can promote the out-diffusion of oxygen and form wider DFZ in Ge-Doped CZSi wafer than that in the control sample, but also can suppress the formation of precipitation.
刘莉,秦福,等.92年全国集成电路硅材料会议论文集.杭州:1992, 81-84.[2]Tetuo Fukuda, Akira Ohsawa. Appl. Phys. Lett., 1992, 60(10): 1184-1186.[3]Sun Q, Yao K H, et al. J. Appl. Phys, 1990, 67: 9313-4319.[4]Gosclc U. Appl. Phys. A, 1982, 28: 79-82.
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