SIMS ANALYSIS OF BF2+ IMPLANTED Si-GATE

Liu Jialu; Zhang Tingqing; Zhang Zhengxuan; Zhao Yuanfu

Volume 16 Issue 5

Sep. 1994

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Article Navigation > Journal of Electronics & Information Technology > 1994 > 16(5): 541-544

Liu Jialu, Zhang Tingqing, Zhang Zhengxuan, Zhao Yuanfu. SIMS ANALYSIS OF BF2+ IMPLANTED Si-GATE[J]. Journal of Electronics & Information Technology, 1994, 16(5): 541-544.

Citation:

Liu Jialu, Zhang Tingqing, Zhang Zhengxuan, Zhao Yuanfu. SIMS ANALYSIS OF BF2+ IMPLANTED Si-GATE[J]. Journal of Electronics & Information Technology, 1994, 16(5): 541-544.

Liu Jialu, Zhang Tingqing, Zhang Zhengxuan, Zhao Yuanfu. SIMS ANALYSIS OF BF2+ IMPLANTED Si-GATE[J]. Journal of Electronics & Information Technology, 1994, 16(5): 541-544.

Citation:

Liu Jialu, Zhang Tingqing, Zhang Zhengxuan, Zhao Yuanfu. SIMS ANALYSIS OF BF2+ IMPLANTED Si-GATE[J]. Journal of Electronics & Information Technology, 1994, 16(5): 541-544.

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SIMS ANALYSIS OF BF2+ IMPLANTED Si-GATE

Received Date: 1993-06-07
Rev Recd Date: 1993-12-30
Publish Date: 1994-09-19

Abstract

Abstract

The migration of fluorine atoms in poly-silicon and SiO2 of BF+2 implanted Si-gate before and after annealing has been analyzed using SIMS. The results show that a part of fluorine atoms of BF+2 implanted Si-gate with an energy of 80keV and doses of 21015 and 51015cm-2 after annealing diffiuse into SiO2 region of this gate. Anomalous migration of fluorine atoms is observed in both poly-silicon and SiO2. This is due to the collection of fluorine atoms in the regions of residual damage and bond defects.

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References(1)

References

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