Ke Daoming, Feng Yaolan, Tong Qinyi, Ke Xiaoli. TRANSIENT CHARACTERISTIC ANALYSIS OF HIGH TEMPERATURE CMOS DIGITAL INTEGRATED CIRCUITS[J]. Journal of Electronics & Information Technology, 1994, 16(1): 8-17.
Citation:
Ke Daoming, Feng Yaolan, Tong Qinyi, Ke Xiaoli. TRANSIENT CHARACTERISTIC ANALYSIS OF HIGH TEMPERATURE CMOS DIGITAL INTEGRATED CIRCUITS[J]. Journal of Electronics & Information Technology, 1994, 16(1): 8-17.
Ke Daoming, Feng Yaolan, Tong Qinyi, Ke Xiaoli. TRANSIENT CHARACTERISTIC ANALYSIS OF HIGH TEMPERATURE CMOS DIGITAL INTEGRATED CIRCUITS[J]. Journal of Electronics & Information Technology, 1994, 16(1): 8-17.
Citation:
Ke Daoming, Feng Yaolan, Tong Qinyi, Ke Xiaoli. TRANSIENT CHARACTERISTIC ANALYSIS OF HIGH TEMPERATURE CMOS DIGITAL INTEGRATED CIRCUITS[J]. Journal of Electronics & Information Technology, 1994, 16(1): 8-17.
This paper analyzes transient characteristics of high temperature CMOS inverter and gate circuits, and gives computational formulas of their rise time, fall time and delay time. It may be concluded that the transient characteristics of high temperature CMOS inverter and gate circuits deteriorate due to reduction of carrier mobility and threshold voltages of MOST's and increase of leakage currents of MOST's orain terminal pn junction. The calculation results can explain experimental phenomena.
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