STUDY OF THE FORMATION OF NICKEL SILICIDES IN SITU BY TEM

Gao Mingtai

Volume 10 Issue 4

Jul. 1988

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Gao Mingtai. STUDY OF THE FORMATION OF NICKEL SILICIDES IN SITU BY TEM[J]. Journal of Electronics & Information Technology, 1988, 10(4): 360-366.

Citation:

Gao Mingtai. STUDY OF THE FORMATION OF NICKEL SILICIDES IN SITU BY TEM[J]. Journal of Electronics & Information Technology, 1988, 10(4): 360-366.

Gao Mingtai. STUDY OF THE FORMATION OF NICKEL SILICIDES IN SITU BY TEM[J]. Journal of Electronics & Information Technology, 1988, 10(4): 360-366.

Citation:

Gao Mingtai. STUDY OF THE FORMATION OF NICKEL SILICIDES IN SITU BY TEM[J]. Journal of Electronics & Information Technology, 1988, 10(4): 360-366.

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STUDY OF THE FORMATION OF NICKEL SILICIDES IN SITU BY TEM

Gao Mingtai

Received Date: 1986-08-14
Rev Recd Date: 1987-09-25
Publish Date: 1988-07-19

Abstract

Abstract

The interface of Si-Ni produced by evaporation was annealed from room temperature to 800℃ and in situ studied by transmission electron microscopy (TEM). The formation of Ni2Si, NiSi and NiSi2 on chemically cleaned Si (100) and (111) surfaces has been investigated. On the basis of experimental results, SiC had been formed at 650℃ on such cleaned Si surface at 1x10-6 mmHg vaccum; the appearance of that series of nickel silicide were not at an exact temperature; and it would be easier to epitaxy silicides on Si (111) than (100) surface.

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References(1)

References

H. Foll, Philosophical Magazine A, 45(1982), 31-37.[2]Z. Liliental, et al., Thin Solid Films, 104(1983), 17-29.[3]F. Folk et al., J. Appl. Phys., 52(1981), 250-255.[4]D. Cherns, et al., Philosophical Magazine A, 49(1984), 165-177.[5]A. K. Sinha, et al., J. Appl. Phys., 43(1972),3637-3643.[6]Y. J. Chang.[J].et al.,J. Vacuum Sci. Tech, A1(1983.1193,:-[7]E. J, Loenen, et al., Appl. Phys. Lett., 45(1984), 41.[8]E. J. Loenen, et al., Surface Science, 154(1985), 52.[9]E. J. Loenen, et al., Surface Science, 157(1985), 1.[10]O. Nishikawa, et al., J. Vacuum Sci Tech., B2(1984), 21.[11]F.Comin, et al., Phy. Rev. Lett., 51(1983), 2402.[12]F. Comin, J, Vacuum Sci Tech., (13(1985), 930.[13]R.W. Bicknell, J. Phys. D: Appl. Phys., 6(1973), 1991-1997.[14]高铭台,电子科学学刊,9(1987), 420-427.

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