A NEAR IR PHOTOCATHODE WITH 0.7-1.65m PHOTORESPONSE

Sep. 2010

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Article Navigation > Journal of Electronics & Information Technology > 1983 > 5(5): 320-323

Tao Zhao-Min. A NEAR IR PHOTOCATHODE WITH 0.7-1.65m PHOTORESPONSE[J]. Journal of Electronics & Information Technology, 1983, 5(5): 320-323.

Citation:

Tao Zhao-Min. A NEAR IR PHOTOCATHODE WITH 0.7-1.65m PHOTORESPONSE[J]. Journal of Electronics & Information Technology, 1983, 5(5): 320-323.

Tao Zhao-Min. A NEAR IR PHOTOCATHODE WITH 0.7-1.65m PHOTORESPONSE[J]. Journal of Electronics & Information Technology, 1983, 5(5): 320-323.

Citation:

Tao Zhao-Min. A NEAR IR PHOTOCATHODE WITH 0.7-1.65m PHOTORESPONSE[J]. Journal of Electronics & Information Technology, 1983, 5(5): 320-323.

Abstract

A near IR GaP/Ga(1-x)InxP/Ga0.47In0.53As (x:01) photocathode with 0.7-1.65 photoresponse is proposed and designed. The photoemission of the GaP/Ga(1-x)InxP/Ga0.47In0.53As is calculated and eompared with the photoemission of the GaAs photocathode (0.4-0.9m) under night sky (full moon and clear star) irradiation.

References

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