THE GROWTH OF MONOCRYSTALLINE SILICON THIN FILM ON INSULATOR (SOI) BY SCANNING ELECTRON BEAM

Gat A, et al. Appl. Phys. Lett., 1978，33(8): 775-778.[2]Ohmura Y, et al. IEEE Electron Devices Lett., 1983, EDL-4(3):57-59.[3]Emery K, et al. SPIE-Society of Photo-Optical Instrumentation Engineers, Vol-459, Laser Assisted Deposition, Etching and Doping, 1984:82-89.[4]Hopper G F, et al. Electron. Lett., 1984, 20(12): 500-501.[5]Kawamura S, et al. Laser-Induced Lateral Epitaxial Growth of Si over SiO2, Extended Abstracts of the Electrochem. Soc., Spring Meeting, Montreal, Canada; 1982,243-244.[6]Bradbury D R, et al. J.Appl. Phys., 1984, 55(2):519-523.[7]张旭光,李映雪,王阳元,朱忠伶.电子学报,1989,17(5): 1-7.[8]Shahidi, et al. Fabrication of CMOS on Ultrathin SOl obtained by Epitaxial Lateral Overgrowth and Chemical-Mechanical Polishing. IEDM-International Electron Devices Meeting-Technical Digest 1990, San Francisco, CA: Dec. 9-12, 1990, Sponsored by Electron Devices Society of IEEE: 25.2.1-25.2.4.