Gao Fengseng, Gong Xiuying, Ge Yongcai. A NEW TECHNIQUE FOR THINNING THE THICKNESS OF UNUNIFORM EPILAYERS--SELECTIVE ANODIC OXIDATION[J]. Journal of Electronics & Information Technology, 1991, 13(2): 221-224.
Citation:
Gao Fengseng, Gong Xiuying, Ge Yongcai. A NEW TECHNIQUE FOR THINNING THE THICKNESS OF UNUNIFORM EPILAYERS--SELECTIVE ANODIC OXIDATION[J]. Journal of Electronics & Information Technology, 1991, 13(2): 221-224.
Gao Fengseng, Gong Xiuying, Ge Yongcai. A NEW TECHNIQUE FOR THINNING THE THICKNESS OF UNUNIFORM EPILAYERS--SELECTIVE ANODIC OXIDATION[J]. Journal of Electronics & Information Technology, 1991, 13(2): 221-224.
Citation:
Gao Fengseng, Gong Xiuying, Ge Yongcai. A NEW TECHNIQUE FOR THINNING THE THICKNESS OF UNUNIFORM EPILAYERS--SELECTIVE ANODIC OXIDATION[J]. Journal of Electronics & Information Technology, 1991, 13(2): 221-224.
A new technique called selective anodic oxidation, by which the ununiform epilayers can be thinned, is presented. The thickness of n+-layers of GaAs IMPATT diodes with n+-n-n++ structure has been strictly controlled by the use of this technique. This results in the efficiency of IMPATT diodes up to its theoretical value.
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