Fu Chunyin, Lu Yongling, Zeng Shurong. THE RESPONSE OF MAJORITY CARRIER TRAP UNDER THE FORWARD BIAS LOW-INJECTION PULSE AND THE RATIO OF THE CAPTURE CONSTANTS OF THE TWO KINDS OF CARRIERS[J]. Journal of Electronics & Information Technology, 1990, 12(2): 208-213.
Citation:
Fu Chunyin, Lu Yongling, Zeng Shurong. THE RESPONSE OF MAJORITY CARRIER TRAP UNDER THE FORWARD BIAS LOW-INJECTION PULSE AND THE RATIO OF THE CAPTURE CONSTANTS OF THE TWO KINDS OF CARRIERS[J]. Journal of Electronics & Information Technology, 1990, 12(2): 208-213.
Fu Chunyin, Lu Yongling, Zeng Shurong. THE RESPONSE OF MAJORITY CARRIER TRAP UNDER THE FORWARD BIAS LOW-INJECTION PULSE AND THE RATIO OF THE CAPTURE CONSTANTS OF THE TWO KINDS OF CARRIERS[J]. Journal of Electronics & Information Technology, 1990, 12(2): 208-213.
Citation:
Fu Chunyin, Lu Yongling, Zeng Shurong. THE RESPONSE OF MAJORITY CARRIER TRAP UNDER THE FORWARD BIAS LOW-INJECTION PULSE AND THE RATIO OF THE CAPTURE CONSTANTS OF THE TWO KINDS OF CARRIERS[J]. Journal of Electronics & Information Technology, 1990, 12(2): 208-213.
The response of the majority carrier traps in the semiconductors p+-n junction is analysed in detail under the low-injecting conditions. It points out that the effects of the majority carrier injecting and captured by the traps may happen if the forward bias voltage is larger enough but limited within the low-injection range. Yhen the reverse bias voltage is smaller so that the response of the tail region is not neglected than of the whole response region, then the effect of the minority carriers injecting and captured will be observable in the DLTS. It can be used to measure the Cp/Cn.
D. V. Lang, J.Appl. Phys., 45(1974), 3023.[2]A. C. Wang, C. T. Sah, J.Appl. Phys., 57 (1985), 4645.[3]傅春寅,鲁永令,曾树荣,物理学报,34(1985), 1559.[4]傅春寅,鲁永令,曾树荣,吴恩,半导体学报,8(1987), 130.[5]C. T. Sah, Solid-State Electron, 13 (1970), 759.
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