Zhang Weilian, Xu Yuesheng, Liu Caichi, Tang Jian. GETTING OF THE HAZE DEFECTS ON p-Si WAFER[J]. Journal of Electronics & Information Technology, 1993, 15(5): 536-540.
Citation:
Zhang Weilian, Xu Yuesheng, Liu Caichi, Tang Jian. GETTING OF THE HAZE DEFECTS ON p-Si WAFER[J]. Journal of Electronics & Information Technology, 1993, 15(5): 536-540.
Zhang Weilian, Xu Yuesheng, Liu Caichi, Tang Jian. GETTING OF THE HAZE DEFECTS ON p-Si WAFER[J]. Journal of Electronics & Information Technology, 1993, 15(5): 536-540.
Citation:
Zhang Weilian, Xu Yuesheng, Liu Caichi, Tang Jian. GETTING OF THE HAZE DEFECTS ON p-Si WAFER[J]. Journal of Electronics & Information Technology, 1993, 15(5): 536-540.
The irradiation defects in Si wafer introduced by fast neutron can be used to act as nuclei of oxygen precipitation. These defeccts accelerate the formarion of oxygen precipitation in denuded region as well as getting irapurity region, thus haze dtfects on Si wafer can be restraint effectively. In this paper, a more practicable annealing technology and a brief interpretation are given.
D. Pamerantz, J. Appl. Phys., 10(1976)38, 5020-5023.[2]W. Wijaranakula et al., J. Electrochem. Soc., 137(1990)4, 1262-1265.[3]L. Katz et al., Neutron Transmutation Doping in Semiconductor, Ed. by T. M. Meese, New York,[4](1979), p. 229-230.[5]Y. H. Lee et al., Phys. Rev., 2A(1965)138, 543 -545.[6]唐建,p型111硅片氧化雾缺陷形成机理,河北工学院硕士研究生毕业论文,天津,1992年,第49页.
DownLoad: