Xie Baixing. FABRICATION OF SECONDARY EMISSION FILM BY PYROLYZATION OF ALUMINIUM ETHOXIDE[J]. Journal of Electronics & Information Technology, 1990, 12(1): 109-112.
Citation:
Xie Baixing. FABRICATION OF SECONDARY EMISSION FILM BY PYROLYZATION OF ALUMINIUM ETHOXIDE[J]. Journal of Electronics & Information Technology, 1990, 12(1): 109-112.
Xie Baixing. FABRICATION OF SECONDARY EMISSION FILM BY PYROLYZATION OF ALUMINIUM ETHOXIDE[J]. Journal of Electronics & Information Technology, 1990, 12(1): 109-112.
Citation:
Xie Baixing. FABRICATION OF SECONDARY EMISSION FILM BY PYROLYZATION OF ALUMINIUM ETHOXIDE[J]. Journal of Electronics & Information Technology, 1990, 12(1): 109-112.
A metal-oxide secondary emission film can be deposited on glass, ceramic or semiconductor substrates by thermal decomposition of an organo-metal alkoxide. For instance, MgO (or Al2O3) secondary emission film can be obtained from magnesium (or Aluminium) ethoxide thermal decomposition. In the present method, Al2O3: Mo secondary emission film has been made from thermal decomposition of home-made Aluminium ethoxide and Molybdenum pentachloride. The depositing conditions are T = 450℃ and t=12min for the about 1000 thickness of film to get. The maximum secondary emission coefficient and resistivity of the film are max=3.1, =107-109, cm respectively.
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