Wu Xiang-Sheng, Yang Yi, Chen Pei-Ran, Xu Shao-Hua, Li Yun-Ping, Hu Dao-Shan. MISPLACED p-n JUNCTION IN D. H. GaInAsP/InP WAFER GROWN BY LPE[J]. Journal of Electronics & Information Technology, 1982, 4(4): 242-247.
Citation:
Wu Xiang-Sheng, Yang Yi, Chen Pei-Ran, Xu Shao-Hua, Li Yun-Ping, Hu Dao-Shan. MISPLACED p-n JUNCTION IN D. H. GaInAsP/InP WAFER GROWN BY LPE[J]. Journal of Electronics & Information Technology, 1982, 4(4): 242-247.
Wu Xiang-Sheng, Yang Yi, Chen Pei-Ran, Xu Shao-Hua, Li Yun-Ping, Hu Dao-Shan. MISPLACED p-n JUNCTION IN D. H. GaInAsP/InP WAFER GROWN BY LPE[J]. Journal of Electronics & Information Technology, 1982, 4(4): 242-247.
Citation:
Wu Xiang-Sheng, Yang Yi, Chen Pei-Ran, Xu Shao-Hua, Li Yun-Ping, Hu Dao-Shan. MISPLACED p-n JUNCTION IN D. H. GaInAsP/InP WAFER GROWN BY LPE[J]. Journal of Electronics & Information Technology, 1982, 4(4): 242-247.
Misplaced p-n junetion in the LPE D. H. GaInAsP/InP wafer is investigated by scanning electron microscope and electron beam-induced current method. It is shown that one of the reasons for the misplaced p-n junetion is Zn contamination. By controlling doping level of p-type dopant Zn, or using Mg as p-type dopant, the correctly located p-n junetion is obtained. The locations of the p-n junetion of some samples are measured by electrochemical c-v method. The results obtained are consistent with the emission spectrum of the LED fabricated from the wafers.
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