A set of programs is estabilished for IMPATT Diode Simulation. It can be used to calculate the DC small signal and large signal solution of the IMPATT diodes made of different materials and having different doping profiles. The physical principles, numerical methods and program designs are discussed, and the half-implicit method is presented in detail. Those programs can be used to simulate all kinds of transit-time devices, but only the calculating results of Si IMPATT Diode are given.
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