A DESIGN OF DOUBLE INJECTION TYPE MAGNETO-DIODE

Huang Dexing

Volume 8 Issue 2

Mar. 1986

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Article Navigation > Journal of Electronics & Information Technology > 1986 > 8(2): 104-109

Huang Dexing. A DESIGN OF DOUBLE INJECTION TYPE MAGNETO-DIODE[J]. Journal of Electronics & Information Technology, 1986, 8(2): 104-109.

Citation:

Huang Dexing. A DESIGN OF DOUBLE INJECTION TYPE MAGNETO-DIODE[J]. Journal of Electronics & Information Technology, 1986, 8(2): 104-109.

Huang Dexing. A DESIGN OF DOUBLE INJECTION TYPE MAGNETO-DIODE[J]. Journal of Electronics & Information Technology, 1986, 8(2): 104-109.

Citation:

Huang Dexing. A DESIGN OF DOUBLE INJECTION TYPE MAGNETO-DIODE[J]. Journal of Electronics & Information Technology, 1986, 8(2): 104-109.

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A DESIGN OF DOUBLE INJECTION TYPE MAGNETO-DIODE

Huang Dexing

Received Date: 1984-06-26
Rev Recd Date: 1985-09-21
Publish Date: 1986-03-19

Abstract

Abstract

A new design is proposed for long P+IN+ type Ge magnetodiode with a high recombination region on one side. The optimal relation is established between its length (l), depth (d), width () and resistivity () for designing Ge magnetodiode: (/) (l/d)3=10.75(△T)2/(I03Rth2) △T is the limit of chip temperature rise, Rth the thermal resistance, I0 the current flowing through diode.

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References(1)

References

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