NONLINEAR DISTORTION ANALYSIS OF BIPOLARTRANSISTOR

He Fang; Hu Sifu

Volume 14 Issue 2

Mar. 1992

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Article Navigation > Journal of Electronics & Information Technology > 1992 > 14(2): 190-198

He Fang, Hu Sifu. NONLINEAR DISTORTION ANALYSIS OF BIPOLARTRANSISTOR[J]. Journal of Electronics & Information Technology, 1992, 14(2): 190-198.

Citation:

He Fang, Hu Sifu. NONLINEAR DISTORTION ANALYSIS OF BIPOLARTRANSISTOR[J]. Journal of Electronics & Information Technology, 1992, 14(2): 190-198.

He Fang, Hu Sifu. NONLINEAR DISTORTION ANALYSIS OF BIPOLARTRANSISTOR[J]. Journal of Electronics & Information Technology, 1992, 14(2): 190-198.

Citation:

He Fang, Hu Sifu. NONLINEAR DISTORTION ANALYSIS OF BIPOLARTRANSISTOR[J]. Journal of Electronics & Information Technology, 1992, 14(2): 190-198.

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NONLINEAR DISTORTION ANALYSIS OF BIPOLARTRANSISTOR

He Fang^{①;胡思福},
Hu Sifu

Received Date: 1991-01-31
Rev Recd Date: 1991-07-08
Publish Date: 1992-03-19

Abstract

Abstract

An AC small-signal transistor model incorporating 8 nonlinearities using Taylor series representations is described. Based on this method, a nonlinear distortion-analysis program has been developed. It is used to compute the third-order intermodulation distortion IMs. The relations between IM3 and the operating frequency, emitter and base widths, emitter line current density and doped impurity concentration on base are obtained.

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References(1)

References

S. Narayanan, Bell Sys. Tech. J., 46(1967)5, 991-1024.[2]J. T, Chea, C. P. Snapp, IEEE Trans, on MTT, MTT-27(1979), 423-430.[3]H. C. Poon, IEEE Trans, on ED, ED-19(1972), 719-739.[4]Y. L. Kao, IEEE Trans, on CT, CT-20(1973), 709-716.[5]H. Abraham, R. G. Meyer, IEEE Trans, on ED, ED-23(1976), 1290-1299.[6]O. Muler, Proc. IEEE., 58(1970)7, 1112-1121.[7]陈星弼,唐茂成,晶体管原理与设计,成都电讯工程学院出版社,1987年.

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