FLUORINE BEHAVIOUR IN BF+2 IMPLANTED POLYSILICON FILMS SUBJECTED TO RAPID THERMAL ANNEALING

Lin Chenglu Ni Rushan Zou Shichang

Volume 11 Issue 4

Jul. 1989

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Article Navigation > Journal of Electronics & Information Technology > 1989 > 11(4): 434-438

Lin Chenglu Ni Rushan Zou Shichang. FLUORINE BEHAVIOUR IN BF+2 IMPLANTED POLYSILICON FILMS SUBJECTED TO RAPID THERMAL ANNEALING[J]. Journal of Electronics & Information Technology, 1989, 11(4): 434-438.

Citation:

Lin Chenglu Ni Rushan Zou Shichang. FLUORINE BEHAVIOUR IN BF+2 IMPLANTED POLYSILICON FILMS SUBJECTED TO RAPID THERMAL ANNEALING[J]. Journal of Electronics & Information Technology, 1989, 11(4): 434-438.

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FLUORINE BEHAVIOUR IN BF+2 IMPLANTED POLYSILICON FILMS SUBJECTED TO RAPID THERMAL ANNEALING

Lin Chenglu Ni Rushan Zou Shichang

Received Date: 1987-05-18
Rev Recd Date: 1987-08-31
Publish Date: 1989-07-19

Abstract

Abstract

The physical and electrical properties of BF+2 implanted polysilicon film subjected to rapid thermal annealing (RTA) are presented. It is found that the out diffusion of F and its segregation at polysilicon/silicon oxide interface during RTA are the major causes of F anomalous migration. Fluorine bubbles were observed in BF+2 implanted samples at doses of 11015 and 51015cm-2 after RTA.

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References

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