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Volume 9 Issue 3
May  1987
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Chen Kaimao, Wang Zhongan. DEEP LEVELS RELATED TO COPPER IN SILICON[J]. Journal of Electronics & Information Technology, 1987, 9(3): 256-263.
Citation: Chen Kaimao, Wang Zhongan. DEEP LEVELS RELATED TO COPPER IN SILICON[J]. Journal of Electronics & Information Technology, 1987, 9(3): 256-263.

DEEP LEVELS RELATED TO COPPER IN SILICON

  • Received Date: 1985-05-13
  • Rev Recd Date: 1985-07-30
  • Publish Date: 1987-05-19
  • The energy positions and carrier capture cross-sections of the deep levels related to copper in silicon are measured by DLTS. The annealing behaviour and spatial distributions of some of these levels are studied at the same time. The results show that there are not any triple acceptor or quadruple state corresponding to substimtional copper in silicon, which have been reported in the literature. Most of the deep levels related to copper in silicon are corresponding to complexes of copper and defects in silicon.
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