THE ANOMALOUS PHENOMENA ON DLTS OF GOLD DEEP ACCEPTOR LEVEL IN Si n+-P JUNCTION

Fu Chunyin Lu Yongling Zeng Shurong

Volume 11 Issue 3

May 1989

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Article Navigation > Journal of Electronics & Information Technology > 1989 > 11(3): 284-289

Fu Chunyin Lu Yongling Zeng Shurong. THE ANOMALOUS PHENOMENA ON DLTS OF GOLD DEEP ACCEPTOR LEVEL IN Si n+-P JUNCTION[J]. Journal of Electronics & Information Technology, 1989, 11(3): 284-289.

Citation:

Fu Chunyin Lu Yongling Zeng Shurong. THE ANOMALOUS PHENOMENA ON DLTS OF GOLD DEEP ACCEPTOR LEVEL IN Si n+-P JUNCTION[J]. Journal of Electronics & Information Technology, 1989, 11(3): 284-289.

Fu Chunyin Lu Yongling Zeng Shurong. THE ANOMALOUS PHENOMENA ON DLTS OF GOLD DEEP ACCEPTOR LEVEL IN Si n+-P JUNCTION[J]. Journal of Electronics & Information Technology, 1989, 11(3): 284-289.

Citation:

Fu Chunyin Lu Yongling Zeng Shurong. THE ANOMALOUS PHENOMENA ON DLTS OF GOLD DEEP ACCEPTOR LEVEL IN Si n+-P JUNCTION[J]. Journal of Electronics & Information Technology, 1989, 11(3): 284-289.

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THE ANOMALOUS PHENOMENA ON DLTS OF GOLD DEEP ACCEPTOR LEVEL IN Si n+-P JUNCTION

Fu Chunyin Lu Yongling Zeng Shurong

Received Date: 1987-07-30
Rev Recd Date: 1988-03-17
Publish Date: 1989-05-19

Abstract

Abstract

The relationship between the majority carrier pulse width tp and DLTS intensity of gold acceptor EA in Si n+-p junction is studied. It is found that the DLTS intensity decreases monotonously with the increasing pulse width when tp1s. Some typical experimental results are given. The EA has two response regions: the majority carrier response region and minority carrier one. Just the two response regions caused the anomalous phenomena.

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References(1)

References

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