OBSERVATION AND STUDY ON THE DARK DEFECTS IN InGaAsP/InP DOUBLE-HETEROSTRUCTURE LEDS

Zhang Guicheng; Shen Pangnian

Volume 9 Issue 5

Sep. 1987

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Article Navigation > Journal of Electronics & Information Technology > 1987 > 9(5): 435-440

Zhang Guicheng, Shen Pangnian . OBSERVATION AND STUDY ON THE DARK DEFECTS IN InGaAsP/InP DOUBLE-HETEROSTRUCTURE LEDS[J]. Journal of Electronics & Information Technology, 1987, 9(5): 435-440.

Citation:

Zhang Guicheng, Shen Pangnian . OBSERVATION AND STUDY ON THE DARK DEFECTS IN InGaAsP/InP DOUBLE-HETEROSTRUCTURE LEDS[J]. Journal of Electronics & Information Technology, 1987, 9(5): 435-440.

Zhang Guicheng, Shen Pangnian . OBSERVATION AND STUDY ON THE DARK DEFECTS IN InGaAsP/InP DOUBLE-HETEROSTRUCTURE LEDS[J]. Journal of Electronics & Information Technology, 1987, 9(5): 435-440.

Citation:

Zhang Guicheng, Shen Pangnian . OBSERVATION AND STUDY ON THE DARK DEFECTS IN InGaAsP/InP DOUBLE-HETEROSTRUCTURE LEDS[J]. Journal of Electronics & Information Technology, 1987, 9(5): 435-440.

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OBSERVATION AND STUDY ON THE DARK DEFECTS IN InGaAsP/InP DOUBLE-HETEROSTRUCTURE LEDS

Received Date: 1985-05-27
Rev Recd Date: 1985-09-03
Publish Date: 1987-09-19

Abstract

Abstract

The dark defects in InGaAsP/InP DH LEDs are observed with an infrared line scanner. The dark structure appears before aging and it exists mainly in the form of dar kspot defect. The effect of the variety and concentration of the doping for p-InP confining layers on the dark defects is studied. The results show that the percentage of devices with dark defects is much lower for Mg or In-Zn doped devices than for Zn doped devices. It is believed that Zn is one of the important orign for the formation of dark defects. The growth rate of dark defects is studied both at room temperature and at 70--85℃. The results show that after aging for 15000 h at room temperature there are no dark defects newly appeared. But after agin for 2000 h at 70--85℃ some devices show newly formed dark structure with very slow growth rate.

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References(1)

References

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