STUDY OF THE DIFFUSION OF Zn INTO Ge

Zhang Guicheng

Volume 9 Issue 3

May 1987

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Article Navigation > Journal of Electronics & Information Technology > 1987 > 9(3): 264-268

Zhang Guicheng. STUDY OF THE DIFFUSION OF Zn INTO Ge[J]. Journal of Electronics & Information Technology, 1987, 9(3): 264-268.

Citation:

Zhang Guicheng. STUDY OF THE DIFFUSION OF Zn INTO Ge[J]. Journal of Electronics & Information Technology, 1987, 9(3): 264-268.

Zhang Guicheng. STUDY OF THE DIFFUSION OF Zn INTO Ge[J]. Journal of Electronics & Information Technology, 1987, 9(3): 264-268.

Citation:

Zhang Guicheng. STUDY OF THE DIFFUSION OF Zn INTO Ge[J]. Journal of Electronics & Information Technology, 1987, 9(3): 264-268.

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STUDY OF THE DIFFUSION OF Zn INTO Ge

Zhang Guicheng

Received Date: 1985-05-27
Rev Recd Date: 1985-10-29
Publish Date: 1987-05-19

Abstract

Abstract

In this report the diffusion of Zn into Ge is investigated. The experiments are accomplished in an evacuated and sealed quartz ampoule using Zn as the diffusion source. The xj-t1/2 and C-1/T has been given. The influence of the source temperature on rhe curface micro-graph has been given. It is found that using two-temperature process a smooth surface layer can be obtained.

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References(1)

References

G. E. Stillman et. al.,Appl. Phys. Lett., 24(1974), 8.[2]Tokuzo Sukegawa et. al., ibid., 32(1978), 376.[3]C. A. Armiento et. al.,ibid., 34(1979), 229.[4]T. Kaneda et. al., ibid., 34(1979), 866.[5]谢希德,方俊鑫,固体物理学〔上册),上海科学技术出版社,1961,139.

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