COMPUTER AIDED ANALYSIS OF CARRIER ENERGY TRANSPORT IN MOSFETs

Zhang Yimen; Teng Jianxu

Volume 13 Issue 5

Sep. 1991

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Zhang Yimen, Teng Jianxu. COMPUTER AIDED ANALYSIS OF CARRIER ENERGY TRANSPORT IN MOSFETs[J]. Journal of Electronics & Information Technology, 1991, 13(5): 482-488.

Citation:

Zhang Yimen, Teng Jianxu. COMPUTER AIDED ANALYSIS OF CARRIER ENERGY TRANSPORT IN MOSFETs[J]. Journal of Electronics & Information Technology, 1991, 13(5): 482-488.

Zhang Yimen, Teng Jianxu. COMPUTER AIDED ANALYSIS OF CARRIER ENERGY TRANSPORT IN MOSFETs[J]. Journal of Electronics & Information Technology, 1991, 13(5): 482-488.

Citation:

Zhang Yimen, Teng Jianxu. COMPUTER AIDED ANALYSIS OF CARRIER ENERGY TRANSPORT IN MOSFETs[J]. Journal of Electronics & Information Technology, 1991, 13(5): 482-488.

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COMPUTER AIDED ANALYSIS OF CARRIER ENERGY TRANSPORT IN MOSFETs

Received Date: 1990-07-27
Rev Recd Date: 1990-12-15
Publish Date: 1991-09-19

Abstract

Abstract

The two-dimensional numerical simulation of energy transport for MOS FETs is presented, in which the effect of generation, recombination and temperature gradiem of carriers on the characteristics of the devices are considered. An improved mobility model is also proposed. The numerical results of micrometer and submicrometer MOSFETs show that the present model fits esperiment very well.

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References(1)

References

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