CALCULATION OF THE BANDGAP NARROWING DUE TO HEAVY DOPING IN p-TYPE STRAINED Si1-xGex LAYERS

Wu Wengang; Zhang Wanrong; Jiang Desheng; Luo Jinsheng

Volume 18 Issue 6

Nov. 1996

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Article Navigation > Journal of Electronics & Information Technology > 1996 > 18(6): 638-643

Wu Wengang, Zhang Wanrong, Jiang Desheng, Luo Jinsheng. CALCULATION OF THE BANDGAP NARROWING DUE TO HEAVY DOPING IN p-TYPE STRAINED Si1-xGex LAYERS[J]. Journal of Electronics & Information Technology, 1996, 18(6): 638-643.

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Wu Wengang, Zhang Wanrong, Jiang Desheng, Luo Jinsheng. CALCULATION OF THE BANDGAP NARROWING DUE TO HEAVY DOPING IN p-TYPE STRAINED Si1-xGex LAYERS[J]. Journal of Electronics & Information Technology, 1996, 18(6): 638-643.

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CALCULATION OF THE BANDGAP NARROWING DUE TO HEAVY DOPING IN p-TYPE STRAINED Si1-xGex LAYERS

Received Date: 1994-12-31
Rev Recd Date: 1996-02-07
Publish Date: 1996-11-19

Abstract

Abstract

To take the effects of strain induced splitting and non-parabolicity of valence band into account when calculating the bandgap narrowing (BGN) due to heavy doping in p-type pseu-domorphic Si1-xGex layers grown on 100 Si substrate, an equivalent effective degeneracy (EED) model is proposed for the valence band structure of the strained alloy. The calculation results agree very well with published experimental data and show that there is a maximum value of the BGN at a certain Ge fraction if dopant concentration exceeds about 2～3 1019cm-3, and that, otherwise, it will decrease continuously as Ge fraction increases.

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References(1)

References

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