ANALYSIS OF DC CHARACTERISTICS OF ECL CIRCUIT AT LOW TEMPERATURE

Li Yao; Zheng Jiang; Shen Keqiang; Wei Tongli

Volume 18 Issue 2

Mar. 1996

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Article Navigation > Journal of Electronics & Information Technology > 1996 > 18(2): 194-201

Li Yao, Zheng Jiang, Shen Keqiang, Wei Tongli . ANALYSIS OF DC CHARACTERISTICS OF ECL CIRCUIT AT LOW TEMPERATURE[J]. Journal of Electronics & Information Technology, 1996, 18(2): 194-201.

Citation:

Li Yao, Zheng Jiang, Shen Keqiang, Wei Tongli . ANALYSIS OF DC CHARACTERISTICS OF ECL CIRCUIT AT LOW TEMPERATURE[J]. Journal of Electronics & Information Technology, 1996, 18(2): 194-201.

Li Yao, Zheng Jiang, Shen Keqiang, Wei Tongli . ANALYSIS OF DC CHARACTERISTICS OF ECL CIRCUIT AT LOW TEMPERATURE[J]. Journal of Electronics & Information Technology, 1996, 18(2): 194-201.

Citation:

Li Yao, Zheng Jiang, Shen Keqiang, Wei Tongli . ANALYSIS OF DC CHARACTERISTICS OF ECL CIRCUIT AT LOW TEMPERATURE[J]. Journal of Electronics & Information Technology, 1996, 18(2): 194-201.

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ANALYSIS OF DC CHARACTERISTICS OF ECL CIRCUIT AT LOW TEMPERATURE

Received Date: 1994-08-09
Rev Recd Date: 1995-01-23
Publish Date: 1996-03-19

Abstract

Abstract

Based on the analysis of DC characteristics of silicon bipolar transistors at low temperature, DC analytic models of ECL circuit at low temperature are derived, then compared with the experimental data and computer simulation results. The modification of SPICE BJT model about temperature and design of low temperature ECL circuit are discussed.

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References(1)

References

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