DETERMINATION OF GENERATION LIFETIME FROM C-t TRANSIENTS UNDER LINEAR VOLTAGE RAMP BIAS

Zhang Xiumiao

Volume 14 Issue 3

May 1992

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Zhang Xiumiao. DETERMINATION OF GENERATION LIFETIME FROM C-t TRANSIENTS UNDER LINEAR VOLTAGE RAMP BIAS[J]. Journal of Electronics & Information Technology, 1992, 14(3): 291-294.

Citation:

Zhang Xiumiao. DETERMINATION OF GENERATION LIFETIME FROM C-t TRANSIENTS UNDER LINEAR VOLTAGE RAMP BIAS[J]. Journal of Electronics & Information Technology, 1992, 14(3): 291-294.

Zhang Xiumiao. DETERMINATION OF GENERATION LIFETIME FROM C-t TRANSIENTS UNDER LINEAR VOLTAGE RAMP BIAS[J]. Journal of Electronics & Information Technology, 1992, 14(3): 291-294.

Citation:

Zhang Xiumiao. DETERMINATION OF GENERATION LIFETIME FROM C-t TRANSIENTS UNDER LINEAR VOLTAGE RAMP BIAS[J]. Journal of Electronics & Information Technology, 1992, 14(3): 291-294.

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DETERMINATION OF GENERATION LIFETIME FROM C-t TRANSIENTS UNDER LINEAR VOLTAGE RAMP BIAS

Zhang Xiumiao

Received Date: 1991-04-27
Rev Recd Date: 1991-07-23
Publish Date: 1992-05-19

Abstract

Abstract

When a linear voltage ramp applied to the gate of an MOS device the C-t transients are observed. Before the voltage ramp is applied the MOS capacitor is biased into strong inversion in order to eliminate the surface generation. From the C-t transient curve obtained experimentally, the minority carrier generation lifetime in semiconductor can be determined. The experimental results show that for the same sample the lifetimes extracted from the C-t curves obtained under different voltage sweep rates are consistent each other, and they are consistent with the lifetimes extracted fdom saturation capacitance method.

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References(1)

References

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