INFLUENCE OF NITROGEN FLOW RATE ON FIELD ELECTRON EMISSON ON AMORPHOUS-CARBON

Wang Xiaoping; Li Yunjun; Yao Ning; Ma Huizhong; Bi Zhaoqi; Zhang Binglin

Volume 23 Issue 6

Jun. 2001

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Article Navigation > Journal of Electronics & Information Technology > 2001 > 23(6): 622-624

Wang Xiaoping, Li Yunjun, Yao Ning, Ma Huizhong, Bi Zhaoqi, Zhang Binglin. INFLUENCE OF NITROGEN FLOW RATE ON FIELD ELECTRON EMISSON ON AMORPHOUS-CARBON[J]. Journal of Electronics & Information Technology, 2001, 23(6): 622-624.

Citation:

Wang Xiaoping, Li Yunjun, Yao Ning, Ma Huizhong, Bi Zhaoqi, Zhang Binglin. INFLUENCE OF NITROGEN FLOW RATE ON FIELD ELECTRON EMISSON ON AMORPHOUS-CARBON[J]. Journal of Electronics & Information Technology, 2001, 23(6): 622-624.

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INFLUENCE OF NITROGEN FLOW RATE ON FIELD ELECTRON EMISSON ON AMORPHOUS-CARBON

Received Date: 1999-04-01
Rev Recd Date: 1999-11-25
Publish Date: 2001-06-19

Abstract

Abstract

Using microwave plasma-assisted chemical vapor deposition system, the nitrogen dopeed amorphaus-carbon films are obtained on the deposited molybdenum films, which are deposited on ceramic (Al2O3). The scanning electron microscopy (SEM), optical microscopy, X-ray diffraction (XRD) and Raman spectrum are used to analyze the obtained. Experimental results show that, when increasing the nitrogen, the eaission current density increases and the turn-on field decreases.

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References(1)

References

李运钧,何金田,姚宁,张兵临,等,一种简单的金刚石薄膜场至发射器件,科学通报,1997,42(4),368-370.[2]W.Zhu,G.P,Kichanski,Jin S.et al,Electron field emission from ion-implanted diamond,Appl,Phys,Lett,1995,67(8),1157-1159.[3]王小平,李运钧,姚宁,张兵临,等,金刚石镶嵌非品碳膜表面形貌对场臻电子发射的影响,发光学报,1998,19(3):267-271.[4]Yoshiyuki Show,Rumihiko Matsuoka,Masaharn Hayshi,et al,Infiuence of defects on electron emission from diamond films,J.Appl,Phys,1998,84(11),6351-6354.[5]L.K,Cheah,Shi Xu,B.K,Tay,et al,Field emission from,Notrogen doped tearahedral amorphous carbon prepared by filtered cathodic vaemch are technique,Technical Digest of IVMC97 Kyongju,Korea,1997,112-116.

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