Du Yongchang, Zhang Yufeng, Yang Datong, Zhang Guanghua, Han Ruqi. THE DISTRIBUTION OF DENSITY OF GAP STATES FOR PHOSPHORUS-DOPED AMORPHOUS SILICON MEASURED BY DEEP LEVEL TRANSIENT SPECTROSCOPY[J]. Journal of Electronics & Information Technology, 1984, 6(5): 417-421.
Citation:
Du Yongchang, Zhang Yufeng, Yang Datong, Zhang Guanghua, Han Ruqi. THE DISTRIBUTION OF DENSITY OF GAP STATES FOR PHOSPHORUS-DOPED AMORPHOUS SILICON MEASURED BY DEEP LEVEL TRANSIENT SPECTROSCOPY[J]. Journal of Electronics & Information Technology, 1984, 6(5): 417-421.
Du Yongchang, Zhang Yufeng, Yang Datong, Zhang Guanghua, Han Ruqi. THE DISTRIBUTION OF DENSITY OF GAP STATES FOR PHOSPHORUS-DOPED AMORPHOUS SILICON MEASURED BY DEEP LEVEL TRANSIENT SPECTROSCOPY[J]. Journal of Electronics & Information Technology, 1984, 6(5): 417-421.
Citation:
Du Yongchang, Zhang Yufeng, Yang Datong, Zhang Guanghua, Han Ruqi. THE DISTRIBUTION OF DENSITY OF GAP STATES FOR PHOSPHORUS-DOPED AMORPHOUS SILICON MEASURED BY DEEP LEVEL TRANSIENT SPECTROSCOPY[J]. Journal of Electronics & Information Technology, 1984, 6(5): 417-421.
A density-of-state distribution in the pseudo-gap of phosphorus-doped a-Si:H material prepared by GD method has been measured experimentally by deep level tran-sient spectroscopy (DLTS). A minimum value of 71015cm-3 eV-1 has been obtained at the energy of about 0.45 eV below Ec. This physical picture is quite different from the previous one obtained by the field effect method. Some comments on the method used and the theoretical analysis are given.
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