ANALYTICAL INVESTIGATION OF LOW-TEMPERATURE HOT-CARRIER NMOSFET S

Liu Weidong; Wei Tongli

Volume 18 Issue 6

Nov. 1996

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Article Navigation > Journal of Electronics & Information Technology > 1996 > 18(6): 661-665

Liu Weidong, Wei Tongli . ANALYTICAL INVESTIGATION OF LOW-TEMPERATURE HOT-CARRIER NMOSFET S[J]. Journal of Electronics & Information Technology, 1996, 18(6): 661-665.

Citation:

Liu Weidong, Wei Tongli . ANALYTICAL INVESTIGATION OF LOW-TEMPERATURE HOT-CARRIER NMOSFET S[J]. Journal of Electronics & Information Technology, 1996, 18(6): 661-665.

Liu Weidong, Wei Tongli . ANALYTICAL INVESTIGATION OF LOW-TEMPERATURE HOT-CARRIER NMOSFET S[J]. Journal of Electronics & Information Technology, 1996, 18(6): 661-665.

Citation:

Liu Weidong, Wei Tongli . ANALYTICAL INVESTIGATION OF LOW-TEMPERATURE HOT-CARRIER NMOSFET S[J]. Journal of Electronics & Information Technology, 1996, 18(6): 661-665.

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ANALYTICAL INVESTIGATION OF LOW-TEMPERATURE HOT-CARRIER NMOSFET S

Liu Weidong^{①;魏同立},
Wei Tongli

Received Date: 1994-12-19
Rev Recd Date: 1995-10-24
Publish Date: 1996-11-19

Abstract

Abstract

Based on the quasi-2D analytic model for short-channel NMOSFET s in the temperature range of 77-295K, the substrate current (/SUB) related physical mechanism for 77-295K NMOSFET was investigated. It was discovered that the channel electron mean-free path was temperature independent with a value of about 7.6 nm. Although electrons could acquire larger energy at the drain end of the channel at lower temperatures, the /SUB did not increase as significantly as reported by Henning, et al.(1987), owing to the reduced impact ionization process. Agreement between calculations and experiments demonstrated the feasibility of the proposed mechanism in 77-295K.

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References(1)

References

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